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| DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Jul 13 2003 Jan 20 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor FEATURES * Low collector-emitter saturation voltage * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * Higher efficiency leading to less heat generation * Reduced PCB area requirements compared to DPAK. PINNING APPLICATIONS * Power management - DC/DC converters - Supply line switching - Battery charger - Linear voltage regulation (LDO). * Peripheral drivers - Driver in low supply voltage applications, e.g. lamps, LEDs - Inductive load driver, e.g. relays, buzzers, motors. DESCRIPTION NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z. MARKING TYPE NUMBER PBSS4350Z MARKING CODE PB4350 1 Top view 2 3 handbook, halfpage PBSS4350Z QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 50 5 <145 UNIT V A m PIN 1 2 3 4 base collector emitter collector DESCRIPTION 4 2, 4 1 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. 2003 Jan 20 2 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; notes 1 and 3 Tamb 25 C; notes 2 and 3 CONDITIONS open emitter open base open collector - - - - - - - - -65 - -65 MIN. PBSS4350Z MAX. 60 50 6 3 5 1 1.35 2 +150 150 +150 V V V A A A W W UNIT C C C 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see "Thermal considerations for SOT223 in the General Part of associated Handbook". THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS in free air; notes 2 and 3 Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see "Thermal considerations for SOT223 in the General Part of associated Handbook". VALUE 92 62.5 UNIT K/W K/W thermal resistance from junction to ambient in free air; notes 1 and 3 2003 Jan 20 3 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = 50 V; IE = 0 VCB = 50 V; IE = 0; Tj = 150 C VEB = 5 V; IC = 0 VCE = 2 V; IC = 500 mA VCE = 2 V; IC = 1 A; note 1 VCE = 2 V; IC = 2 A; note 1 VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA IC = 1 A; IB = 50 mA IC = 2 A; IB = 200 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 2 A; IB = 200 mA; note 1 IC = 2 A; IB = 200 mA; note 1 VCE = 2 V; IC = 1 A; note 1 IC = 100 mA; VCE = 5 V; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz MIN. - - - 200 200 100 - - - - - - 100 - PBSS4350Z TYP. - - - - - - - - - 110 - - - - MAX. 100 50 100 - - - 90 170 290 <145 1.2 1.1 - 30 UNIT nA A nA mV mV mV m V V MHz pF 2003 Jan 20 4 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z handbook, halfpage 600 MGW175 handbook, halfpage hFE 500 (1) 1.2 VBE (V) 1.0 MGW176 (1) 400 (2) 0.8 (2) 300 0.6 (3) 200 (3) 0.4 100 0.2 0 10 -1 1 10 102 103 104 I C (mA) 0 10 -1 1 10 102 103 104 I C (mA) VCE = 2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = 2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector-current; typical values. 103 handbook, halfpage VCEsat (mV) 102 (1) MGW181 handbook, halfpage 1.2 VBEsat (V) 1.0 MGW178 (1) 0.8 (2) 0.6 (2) (3) (3) 10 0.4 0.2 1 10 -1 1 10 102 103 104 I C (mA) 0 10 -1 1 10 102 103 104 I C (mA) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.4 Collector-emitter saturation as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2003 Jan 20 5 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z handbook, halfpage I 1200 MGW179 MGW180 C (mA) 1000 handbook, halfpage (1) (2) (3) 5 (1) IC (A) 4 (2) (3) (4) (5) (6) (7) (8) 800 (4) (5) 3 (9) 600 (6) (7) (8) (10) 2 400 (9) (10) 200 (11) (12) 1 0 0 VCE = 5 V. (1) (2) (3) (4) IB = 3.96 nA. IB = 3.63 nA. IB = 3.30 nA. IB = 2.97 mA. (5) IB = 2.64 nA. (6) IB = 2.31 nA. (7) IB = 1.98 nA. (8) IB = 1.65 nA. (9) IB = 1.32 nA. (10) IB = 0.99 nA. (11) IB = 0.66 nA. (12) IB = 0.33 nA. 0.4 0.8 1.2 2 1.6 VCE (V) 0 0 VCE = 5 V. (1) (2) (3) (4) IB = 150 mA. IB = 135 mA. IB = 120 mA. IB = 105 mA. 0.4 0.8 1.2 1.6 2 VCE (V) (5) IB = 90 mA. (6) IB = 75 mA. (7) IB = 60 mA. (8) IB = 45 mA. (9) IB = 30 mA. (10) IB = 15 mA. Fig.6 Collector current as a function of collector-emitter voltage; typical values. Fig.7 Collector current as a function of collector-emitter voltage; typical values. 103 handbook, halfpage RCEsat () 102 MGW182 10 1 (1) (2) 10 -1 (3) 10 -2 10 -1 1 10 102 103 104 I C (mA) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.8 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 Jan 20 6 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads PBSS4350Z SOT223 D B E A X c y HE b1 vMA 4 Q A A1 1 e1 e 2 bp 3 wM B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ SC-73 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2003 Jan 20 7 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PBSS4350Z This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Jan 20 8 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor NOTES PBSS4350Z 2003 Jan 20 9 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor NOTES PBSS4350Z 2003 Jan 20 10 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor NOTES PBSS4350Z 2003 Jan 20 11 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp12 Date of release: 2003 Jan 20 Document order number: 9397 750 10637 |
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